DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MAAPGM0027-DIE データシートの表示(PDF) - Tyco Electronics

部品番号
コンポーネント説明
メーカー
MAAPGM0027-DIE
MACOM
Tyco Electronics 
MAAPGM0027-DIE Datasheet PDF : 6 Pages
1 2 3 4 5 6
2.0-4.0 GHz 1W Power Amplifier
Features
1 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG™ MESFET Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input
and output. It can be used as a power amplifier stage or as a driver
stage in high power applications.
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufactur-
ing processes, planar processing of ion implanted transistors, multiple
implant capability enabling power, low-noise, switch and digital FETs
on a single chip, and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory metals and
the absence of platinum in the gate metal formulation prevents hydro-
gen poisoning when employed in hermetic packaging.
Primary Applications
Wireless Local Loop 3.4-3.6 GHz
MMDS 2.5-2.7 GHz
Radar
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ 230mA2, Pin = 10 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
2.0-4.0
GHz
Output Power
POUT
30
dBm
Power Added Efficiency
PAE
35
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G
22
dB
Input VSWR
VSWR
1.8:1
Output VSWR
VSWR
1.4:1
Gate Supply Current
Drain Supply Current
IGG
<2
mA
IDD
< 350
mA
Output Third Order Intercept
OTOI
37
3rd Order Intermodulation Distortion
IM3
-15
Single Carrier Level = 21 dBm
5th Order Intermodulation Distortion
IM5
-39
Single Carrier Level = 21 dBm
dBm
dBm
dBm
Noise Figure
2nd Harmonic
3rd Harmonic
NF
6
dB
2f
-15
dBc
3f
-25
dBc
1. TB = MMIC Base Temperature
1
2. Adjust VGG between –2.4 and –1.5V to achieve indicated IDQ .
M/A-COM Inc. and its affiliates reserve the right to make changes to the
North America Tel: 800.366.2266 / Fax: 978.366.2266
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]