MBR735G データシートの表示（PDF） - ON Semiconductor

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MBR735G

SWITCHMODE Power Rectifiers

ON Semiconductor 

MBR735, MBR745

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V

VRWM

MBR735

VR

35

MBR745

45

Average Rectified Forward Current

(TC = 164°C)

IF(AV)

A

Per Device

7.5

Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C)

IFRM

7.5

A

Non−Repetitive Peak Surge Current

IFSM

150

A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

Storage Temperature Range

Operating Junction Temperature (Note 1)

Voltage Rate of Change (Rated VR)

IRRM

Tstg

TJ

dv/dt

1.0

−65 to +175

−65 to +175

10,000

A

°C

°C

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Maximum Thermal Resistance, Junction−to−Case

Maximum Thermal Resistance, Junction−to−Ambient

Symbol

RqJC

RqJA

Value

3.0

60

Unit

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 7.5 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Symbol

Min

Typ

Max

Unit

vF

V

−

0.48 0.57

−

0.61 0.72

−

0.68 0.84

iR

mA

−

10

15

−

0.03

0.1

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