MBRD320T4G(2016) データシートの表示（PDF） - ON Semiconductor
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MBRD320T4G Datasheet PDF : 6 Pages
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MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G
MAXIMUM RATINGS
Rating
MBRD/SBRD8
Symbol
Unit
320 330 340 350 360
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = +125°C, Rated VR)
Peak Repetitive Forward Current, TC = +125°C
(Rated VR, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
20 30 40 50 60
V
VRWM
VR
IF(AV)
3
A
IFRM
6
A
IFSM
75
A
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
IRRM
1
A
Operating Junction Temperature Range (Note 1)
TJ
−65 to +175
°C
Storage Temperature Range
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
RqJC
RqJA
Value
6
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
iF = 3 Amps, TC = +25°C
iF = 3 Amps, TC = +125°C
iF = 6 Amps, TC = +25°C
iF = 6 Amps, TC = +125°C
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = +25°C)
(Rated dc Voltage, TC = +125°C)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Value
Unit
VF
V
0.6
0.45
0.7
0.625
iR
mA
0.2
20
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