MJD148(2004) データシートの表示（PDF） - ON Semiconductor

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MJD148
(Rev.:2004)

NPN Silicon Power Transistor

ON Semiconductor 

MJD148

10

5

500 ms

3

2

dc

1

5 ms

0.5

1 ms

0.3

0.2

0.1

BONDING WIRE LIMIT

THERMAL LIMIT

0.05

SECOND BREAKDOWN LIMIT

0.03

0.02

TC = 25°C SINGLE PULSE, D ≤ 0.1%

TJ = 150°C

0.01

1

2 3 5 7 10

20 30

50 70

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 7. Maximum Rated Forward Bias

FORWARD BIAS SAFE OPERATING AREA

INFORMATION

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 7 is based on TJ(pk) = 150°C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. TJ(pk) may be calculated from the data in

Figure 6. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

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