MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
switch−mode power supply drivers and other switching applications.
Features
• Popular TO−220 Plastic Package
• PNP Complements to the TIP47 thru TIP50 Series
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
VCEO
Vdc
300
350
375
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
VCB
Vdc
300
350
375
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
VEB
5.0
Vdc
IC
1.0
Adc
ICM
3.0
Adc
IB
1.0
Adc
PD
40
W
0.32
W/_C
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
PD
2.0
W
0.016
W/_C
Unclamped Inducting Load Energy
E
(See Figure 10)
20
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
3.125
62.5
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 8
www.onsemi.com
1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
TO−220
CASE 221A−09
STYLE 1
1
23
MARKING DIAGRAM
MJE573xG
AY WW
MJE573x =
G
=
A
=
Y
=
WW
=
Device Code
x = 0, 1, or 1A
Pb−Free Package
Assembly Location
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MJE5730/D