MRF21085 データシートの表示（PDF） - Freescale Semiconductor

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MRF21085

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)

Two - Tone Common - Source Amplifier Power Gain

Gps

—

13.6

—

dB

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Two - Tone Drain Efficiency

η

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

—

36

—

%

Two - Tone Intermodulation Distortion

IMD

—

- 31

—

dBc

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Input Return Loss

IRL

—

- 12

—

dB

(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,

f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)

Pout, 1 dB Compression Point

(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)

P1dB

—

100

—

W

RF Device Data

Freescale Semiconductor

MRF21085LR3 MRF21085LSR3

3

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