MMBR901LT1 データシートの表示（PDF） - Motorola => Freescale

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MMBR901LT1

NPN Silicon High-Frequency Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

15

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

25

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO 2.0

—

—

Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

ICBO

—

—

50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 mAdc, VCE = 5.0 Vdc)

MMBR901LT1, T3

MRF9011LT1

hFE

50

—

200

—

30

80

200

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)

MRF9011LT1

fT

—

3.8

—

GHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MRF9011LT1

Ccb

—

0.55

1.0

pF

FUNCTIONAL TESTS

Power Gain at Minimum Noise Figure

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

MRF9011LT1

GNFmin

—

13.5

—

dB

Minimum Noise Figure (Figure 3)

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

Insertion Gain in 50 Ω System

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

MRF9011LT1

MRF9011LT1

NFmin

—

1.8

—

dB

S212

9.0

10.2

—

dB

Minimum Noise Figure (Figure 3)

(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)

(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)

MMBR901LT1, T3

NFmin

dB

—

1.9

—

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)

MMBR901LT1

Cobo

—

—

1.0

pF

Common–Emitter Amplifier Gain

(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)

MMBR901LT1

Gpe

—

12

—

dB

MMBR901LT1, T3 MRF9011LT1

2–2

MOTOROLA RF DEVICE DATA

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