MRF6V2300NBR1 データシートの表示（PDF） - Freescale Semiconductor

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MRF6V2300NBR1

10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs

Freescale Semiconductor 

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

Package Peak Temperature

Unit

3

260

°C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Drain--Source Breakdown Voltage

(ID = 150 mA, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

—

2.5

mA

IDSS

—

—

50

μAdc

V(BR)DSS

110

—

—

Vdc

IGSS

—

—

10

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 800 μAdc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 2 Adc)

VGS(th)

1

1.63

3

Vdc

VGS(Q)

1.5

2.6

3.5

Vdc

VDS(on)

—

0.28

—

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Crss

—

2.88

—

pF

Coss

—

120

—

pF

Ciss

—

268

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW

Power Gain

Gps

24

25.5

27

dB

Drain Efficiency

ηD

66

68

—

%

Input Return Loss

IRL

—

--16

--9

dB

Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW

Power Gain

f = 27 MHz

f = 450 MHz

Gps

—

31.4

—

dB

—

21.7

—

Drain Efficiency

f = 27 MHz

f = 450 MHz

ηD

—

61.5

—

%

—

59.1

—

Input Return Loss

f = 27 MHz

f = 450 MHz

IRL

—

--17.4

—

dB

—

--24.4

—

ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

MRF6V2300NR1 MRF6V2300NBR1

2

RF Device Data

Freescale Semiconductor

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