MUN2216 データシートの表示（PDF） - Motorola => Freescale

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MUN2216

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Motorola => Freescale 

MUN2211T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

—

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

—

Emitter–Base Cutoff Current

(VEB = 6.0 V, IC = 0)

MUN2211T1

IEBO

—

MUN2212T1

—

MUN2213T1

—

MUN2214T1

—

MUN2215T1

—

MUN2216T1

—

MUN2230T1

—

MUN2231T1

—

MUN2232T1

—

MUN2233T1

—

MUN2234T1

—

—

100

nAdc

—

500

nAdc

—

0.5

mAdc

—

0.2

—

0.1

—

0.2

—

0.9

—

1.9

—

4.3

—

2.3

—

1.5

—

0.18

—

0.13

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

50

—

—

Vdc

Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

50

—

—

Vdc

ON CHARACTERISTICS(3)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

MUN2211T1

hFE

MUN2212T1

35

60

—

60

100

—

MUN2213T1

80

140

—

MUN2214T1

80

140

—

MUN2215T1

160

350

—

MUN2216T1

160

350

—

MUN2230T1

3.0

5.0

—

MUN2231T1

8.0

15

—

MUN2232T1

15

30

—

MUN2233T1

80

200

—

MUN2234T1

80

150

—

Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat)

—

(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1

(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/

MUN2232T1/MUN2233T1/MUN2234T1

—

0.25

Vdc

Output Voltage (on)

VOL

Vdc

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1

—

—

0.2

MUN2212T1

—

—

0.2

MUN2214T1

—

—

0.2

MUN2215T1

—

—

0.2

Vdc

MUN2216T1

—

—

0.2

MUN2230T1

—

—

0.2

MUN2231T1

—

—

0.2

MUN2232T1

—

—

0.2

MUN2233T1

—

—

0.2

MUN2234T1

—

—

0.2

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN2213T1

—

—

0.2

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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