MUN5111DW1T1G データシートの表示（PDF） - ON Semiconductor

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MUN5111DW1T1G

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

ON Semiconductor 

MUN5111DW1, NSBA114EDXV6, NSBA114EDP6

1

IC/IB = 10

25°C

0.1

150°C

TYPICAL CHARACTERISTICS

NSBA114EDP6

1000

100

150°C

25°C

−55°C

−55°C

0.01

0

10

20

30

40

IC, COLLECTOR CURRENT (mA)

Figure 7. VCE(sat) vs. IC

10

1

50

0.1

VCE = 10 V

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

7

100

f = 10 kHz

150°C

6

IE = 0 A

−55°C

5

TA = 25°C

10

25°C

4

1

3

2

0.1

1

VO = 5 V

0

0.01

0

10

20

30

40

50

01

2

3

4

5

6

7

8

VR, REVERSE VOLTAGE (V)

Figure 9. Output Capacitance

Vin, INPUT VOLTAGE (V)

Figure 10. Output Current vs. Input Voltage

100

10 25°C

−55°C

1

150°C

VO = 0.2 V

0.1

0

10

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 11. Input Voltage vs. Output Current

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