NCV8440STT1G(2009) データシートの表示（PDF） - ON Semiconductor
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NCV8440STT1G Datasheet PDF : 8 Pages
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NCV8440
TYPICAL PERFORMANCE CURVES
2.00
ID = 2 A
1.75
1.2
ID = 100 mA,
1.1
VDS = VGS
1.50
1.0
VGS = 5 V
1.25
0.9
1.00
0.75
VGS = 10 V
0.50
−40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Normalized RDS(on) vs. Temperature
1000
100
VGS = 0 V
10
1 150°C
0.1
100°C
0.01
0.001
25°C
10 15 20 25 30 35 40 45 50
VDS , DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Drain−to−Source Leakage Current
0.8
0.7
0.6
−40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Normalized Threshold Voltage vs.
Temperature
10
8
6
4
2 150°C
25°C
0
−40°C
0.5
0.6
0.7
0.8
0.9
1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Source−Drain Diode Forward
Characteristics
500
Ciss
400 VDS = 0 V VGS = 0 V
300 Crss
TJ = 25°C
5
VDS
4
QGS
3
QT
QGD
50
40
VGS
30
200
Ciss
2
20
100
Coss
1
Crss
0
0
10 5
0 5 10 15 20 25 30 35
0
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance Variation
ID = 2.6 A
TJ = 25°C
1
2
3
4
QG, TOTAL GATE CHARGE (nC)
10
0
5
Figure 12. Gate−to−Source Voltage vs. Total
Gate Charge
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