NCV8440STT1G(2009) データシートの表示（PDF） - ON Semiconductor
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NCV8440STT1G Datasheet PDF : 8 Pages
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NCV8440
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4)
Temperature Coefficient (Negative)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
(VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4)
IDSS
Gate−Body Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 100 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 35 V, VGS = 0 V,
f = 10 kHz
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 10 kHz
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
Ciss
Coss
Crss
Ciss
Coss
Crss
Min
52
50.8
1.1
Typ
55
54
−9.3
±35
1.5
−4.1
135
150
95
3.8
155
60
25
170
70
30
Max
59
59.5
10
25
±10
1.9
180
160
110
Unit
V
V
mV/°C
mA
mA
V
mV/°C
mW
Mhos
pF
pF
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