NCV8440 データシートの表示（PDF） - ON Semiconductor

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NCV8440

Protected Power MOSFET

ON Semiconductor 

NCV8440, NCV8440A

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)

(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4)

Temperature Coefficient (Negative)

V(BR)DSS

52

50.8

55

54

−9.3

59

V

59.5

V

mV/°C

Zero Gate Voltage Drain Current

(VDS = 40 V, VGS = 0 V)

(VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4)

IDSS

mA

10

25

Gate−Body Leakage Current

(VGS = ±8 V, VDS = 0 V)

(VGS = ±14 V, VDS = 0 V)

IGSS

mA

±10

±35

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 100 mA)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.1

1.5

1.9

V

−4.1

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 3.5 V, ID = 0.6 A)

(VGS = 4.0 V, ID = 1.5 A)

(VGS = 10 V, ID = 2.6 A)

Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)

DYNAMIC CHARACTERISTICS

RDS(on)

gFS

mW

150

180

135

160

95

110

3.8

Mhos

Input Capacitance

Output Capacitance

Transfer Capacitance

VDS = 35 V, VGS = 0 V,

f = 10 kHz

Ciss

Coss

Crss

155

pF

60

25

Input Capacitance

Output Capacitance

Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 10 kHz

Ciss

Coss

Crss

170

pF

70

30

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Not subject to production testing.

5. Switching characteristics are independent of operating junction temperatures.

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