NCV8570SN275T1G データシートの表示（PDF） - ON Semiconductor

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NCV8570SN275T1G

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

ON Semiconductor 

NCV8570

TYPICAL CHARACTERISTICS

VCE

1 V/div

Vout

1 V/div

Vin

500 mV/div

3.6 V

TA = 25C

Vin = 4 V

Iout = 150 mA

Cnoise = 0 nF

Vout

10 mV/div

4.2 V

TA = 25C

Vout = 1.8 V

Iout = 150 mA

Cout = 1 mF

TIME (20 ms/div)

Figure 20. Enable Voltage and Output Voltage

vs. Time (Start−Up)

TIME (100 ms/div)

Figure 21. Line Transient

Iout

100 mA/div

TA = 25C

Vout

50 mV/div

Vin = 2.8 V

Vout = 1.8 V

Cout = 1 mF

TIME (40 ms/div)

Figure 22. Load Transient

10

Unstable Region

1

Stable Region

0.1

Vout = 3.0 V

Vout = 1.8 V

0.01

0

Cout = 1 mF to 10 mF

25

50

75

100

125 150

Iout, OUTPUT CURRENT (mA)

Figure 23. Output Capacitor ESR vs. Output Current

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