NTE2569 データシートの表示（PDF） - NTE Electronics

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NTE2569

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Turn–On Time

Storage Time

Collector Current Fall Time

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

ton IC = 5A, IB1 = 20A,

tstg

IB2 = –20A, VCC = 20V,

Pulse Width = 20µs,

tf

Duty Cycle ≤ 1%

80 – – V

60 – – V

5––V

– 0.1 – µs

– 0.5 – µs

– 0.1 – µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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