NTE357 データシートの表示（PDF） - NTE Electronics

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NTE357

Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

NTE Electronics 

NTE357

Silicon NPN Transistor

RF Power Output

PO = 7W @ 175MHz

Description:

The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in

the 125−175MHz frequency range.

Features:

D Specified 28V, 175MHz Characteristics −

Output Power = 7.0 Watts

Minimum Gain = 8.4dB

Efficiency = 60%

D Characterized from 125 to 175MHz

D Includes Series Equivalent Impedances

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V

Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V

Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A

Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector−Emitter Breakdown V(BR)CEO IC = 200mAdc, IB = 0,

Voltage

(Note 1)

Collector−Emitter Breakdown V(BR)CES IC = 200mAdc, VBE = 0

Voltage

Min Typ Max Unit

35 − − Vdc

65 − − Vdc

Note 1. Pulsed through 25mH inductor

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