NTE362 データシートの表示（PDF） - NTE Electronics

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NTE362

Silicon NPN Transistor RF Power

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

On Characteristics

DC Current Gain

Dynamic Characteristics

hFE IC = 100mA, VCE = 5.0V

20 80 − −

Output Capacitance

Functional Test

Cob VCB = 12.5V, IE = 0, f = 1.0MHz

− 11 15 pF

Common−Emitter Amplifier Power Gain

Collector Efficiency

GPE VCC = 12.5 V, POUT = 2.0W

IC = 267mA, f = 470MHz

η

VCC = 12.5V, Pout = 2.0W

IC = 240mA, f = 470MHz

9 10 − dB

60 − − %

E

.063 (1.62)

B

.225 (5.72)

E

.530

(13.46)

C

.282 (7.17)

Dia

.123 (3.12)

.005 (0.15)

Seating Plane

.630

(16.0)

Wrench Flat

.250 (6.35) Dia

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