NTR4502PT3G データシートの表示（PDF） - ON Semiconductor

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NTR4502PT3G

Power MOSFET

ON Semiconductor 

NTR4502P

Electrical Characteristics (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 3)

V(BR)DSS

IDSS

IGSS

VGS = 0 V, ID = −250 mA

−30

VGS = 0 V, VDS = −30 V

TJ = 25°C

TJ = 55°C

VDS = 0 V, VGS = ±20 V

Gate Threshold Voltage

Drain−to−Source On Resistance

Forward Transconductance

CHARGES AND CAPACITANCES

VGS(TH)

RDS(on)

gFS

VGS = VDS, ID = −250 mA

VGS = −10 V, ID = −1.95 A

VGS = −4.5 V, ID = −1.5 A

VDS = −10 V, ID=−1.25 A

−1.0

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

SWITCHING CHARACTERISTICS (Note 4)

CISS

COSS

CRSS

QG(TOT)

QG(TH)

QGS

QGD

VGS = 0 V, f = 1 MHz, VDS = −15 V

VGS = −10 V, VDS = −15 V; ID = −1.95 A

Turn−On Delay Time

td(ON)

Rise Time

tr

Turn−Off Delay Time

td(OFF)

Fall Time

tf

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)

VGS =−10 V, VDD = −15 V,

ID = −1.95 A, RG = 6 W

Forward Diode Voltage

VSD

VGS = 0 V, IS = −1.25 A

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.25 A

2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

Typ

155

240

3

200

80

50

6

0.3

1

1.7

5.2

12

19

17.5

−0.8

23

Max Unit

V

−1 mA

−10

±100 nA

−3.0 V

200 mW

350

S

pF

10 nC

10 ns

20

35

30

−1.2 V

ns

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