PBYR2545CTF データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
PBYR2545CTF Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and
all terminals to external
dustfree
heatsink
Visol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
Cisol
Capacitance from pin 2 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
-
- 1500 V
-
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction
to heatsink
Rth j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN. TYP. MAX. UNIT
-
- 4.8 K/W
-
-
4 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage per diode IF = 20 A; Tj = 125˚C
IF = 20 A
IR
Reverse current per diode VR = VRWM
VR = VRWM; Tj = 100˚C
Cd
Junction capacitance per VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
diode
MIN.
-
-
-
-
-
TYP.
0.58
0.63
0.3
30
530
MAX. UNIT
0.65 V
0.68 V
2 mA
40 mA
- pF
October 1998
2
Rev 1.300
Share Link: 