PMBFJ110 データシートの表示（PDF） - Philips Electronics
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PMBFJ110 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-a
from junction to ambient (note 1)
Notes
1. Mounted on an FR-4 printboard.
VALUE
500
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
−IGSS
reverse gate current
IDSX
drain-source cut-off current
IDSS
−V(BR)GSS
drain current
PMBFJ108
PMBFJ109
PMBFJ110
gate-source breakdown voltage
−VGS(off)
RDS(on)
gate-source cut-off voltage
PMBFJ108
PMBFJ109
PMBFJ110
drain-source on-resistance
PMBFJ108
PMBFJ109
PMBFJ110
CONDITIONS
−VGS = 15 V
VDS = 0
VGS = −10 V
VDS = 5 V
VGS = 0
VDS = 15 V
−IG = 1 µA
VDS = 0
ID = 1 µA
VDS = 5 V
VGS = 0 V
VDS = 0.1 V
MIN. MAX. UNIT
−
3 nA
−
3 nA
80
− mA
40
−
10
−
−
25 V
3
10 V
2
6
0.5
4
−
8Ω
−
12
−
18
April 1995
3
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