PSMN1R2-25YL データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

PSMN1R2-25YL

N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK

NXP Semiconductors. 

PSMN1R2-25YL

N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK

Rev. 01 — 25 June 2009

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

„ Advanced TrenchMOS provides low

RDSon and low gate charge

„ High efficiency gains in switching

power converters

„ Improved mechanical and thermal

characteristics

„ LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

„ DC-to-DC converters

„ Lithium-ion battery protection

„ Load switching

„ Motor control

„ Server power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C

-

-

25 V

ID

drain current

Tmb = 25 °C; VGS = 10 V; [1] -

-

100 A

see Figure 1

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

-

-

121 W

Tj

junction temperature

Avalanche ruggedness

-55 -

150 °C

EDS(AL)S non-repetitive

drain-source

avalanche energy

Dynamic characteristics

VGS = 10 V; Tj(init) = 25 °C;

ID = 100 A; Vsup ≤ 25 V;

RGS = 50 Ω; unclamped

-

-

677 mJ

QGD

QG(tot)

gate-drain charge

total gate charge

VGS = 4.5 V; ID = 25 A;

VDS = 12 V; see Figure 12;

see Figure 13

-

11.9 -

nC

-

50.6 -

nC

Share Link: