2N3713(2012) データシートの表示（PDF） - Comset Semiconductors

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2N3713
(Rev.:2012)

EPITAXIAL-BASE TRANSISTORS

Comset Semiconductors 

NPN 2N3713 – 2N3714 – 2N3715 – 2N3716

ELETRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VBE(SAT)

Base-Emitter saturation

Voltage (*) (**)

IC=5 A, IB=0.5 A

2N3713

2N3714

-

2N3715

2N3716

-

2N3713

VBE

Base-Emitter Voltage (*)

(**)

IC=3 A, VCE=2 V

2N3714

2N3715

-

2N3716

2N3713

VCE=10 V, IC=0.5 A

f=1.0 kHz

2N3714

2N3715

25

hfe

Small Signal Current Gain

2N3716

2N3713

VCE=10 V, IC=0.5 A

f=1.0 MHz

2N3714

2N3715

4

2N3716

-

2

V

- 1.5

- 1.5 V

- 250 -

-

4

-

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

(**) These parameters are measured with voltage sensing contacts separate from the current carrying

contacts

05/11/2012

COMSET SEMICONDUCTORS

3|4

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