LH28F800BGN-BL12 データシートの表示（PDF） - Sharp Electronics
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LH28F800BGN-BL12 Datasheet PDF : 40 Pages
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LH28F800BG-L (FOR SOP)
PIN DESCRIPTION
SYMBOL
TYPE
A0-A18
INPUT
DQ0-DQ15
INPUT/
OUTPUT
CE#
INPUT
RP#
INPUT
OE#
WE#
INPUT
INPUT
RY/BY# OUTPUT
VPP
SUPPLY
VCC
SUPPLY
GND
NC
SUPPLY
NAME AND FUNCTION
ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses
are internally latched during a write cycle.
DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs
data during memory array, status register and identifier code read cycles. Data pins float
to high-impedance when the chip is deselected or outputs are disabled. Data is
internally latched during a write cycle.
CHIP ENABLE : Activates the device’s control logic, input buffers, decoders and sense
amplifiers. CE#-high deselects the device and reduces power consumption to standby
levels.
RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets
internal automation. RP#-high enables normal operation. When driven low, RP# inhibits
write operations which provide data protection during power transitions. Exit from deep
power-down sets the device to read array mode. With RP# = VHH, block erase or word
write can operate to all blocks. Block erase or word write with VIH < RP# < VHH produce
spurious results and should not be attempted.
OUTPUT ENABLE : Gates the device’s outputs during a read cycle.
WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are
latched on the rising edge of the WE# pulse.
READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase or word write). RY/BY#-high indicates that
the WSM is ready for new commands, block erase is suspended, and word write is
inactive, word write is suspended, or the device is in deep power-down mode. RY/BY#
is always active and does not float when the chip is deselected or data outputs are
disabled.
BLOCK ERASE AND WORD WRITE POWER SUPPLY : For erasing array blocks or
writing words. With VPP ≤ VPPLK, memory contents cannot be altered. Block erase and
word write with an invalid VPP (see Section 6.2.3 "DC CHARACTERISTICS") produce
spurious results and should not be attempted.
DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V, 3.3 V or
5 V operation. To switch from one voltage to another, ramp VCC down to GND and then
ramp VCC to the new voltage. Do not float any power pins. With VCC ≤ VLKO, all write
attempts to the flash memory are inhibited. Device operations at invalid VCC voltage
(see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should
not be attempted.
GROUND : Do not float any ground pins.
NO CONNECT : Lead is not internal connected; recommend to be floated.
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