RTL030P02(RevB) データシートの表示（PDF） - ROHM Semiconductor
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RTL030P02 Datasheet PDF : 6 Pages
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
50 70 mΩ ID= −3.0A, VGS= −4.5V
55 77 mΩ ID= −3.0A, VGS= −4V
90 125 mΩ ID= −1.5A, VGS= −2.5V
Forward transfer admittance
Yfs ∗ 2.0
−
−
S VDS= −10V, ID= −1.5A
Input capacitance
Ciss
− 760 −
pF VDS= −10V
Output capacitance
Coss
− 125 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ∗ −
Rise time
tr ∗ −
Turn-off delay time
td (off) ∗
−
Fall time
tf ∗ −
Total gate charge
Qg ∗ −
Gate-source charge
Qgs ∗ −
Gate-drain charge
Qgd ∗ −
100 −
12 −
25 −
50 −
22 −
8.0 −
1.5 −
2.5 −
pF f=1MHz
ns ID= −1.5A
ns VDD −15V
VGS= −4.5V
ns RL=10Ω
ns RG=10Ω
nC VDD −15V RL=5Ω
nC VGS= −4.5V RG=10Ω
nC ID= −3A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD
−
− −1.2 V IS= −0.8A, VGS=0V
RTL030P02
Rev.B
2/4
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