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HD6437043F データシートの表示(PDF) - Renesas Electronics

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HD6437043F Datasheet PDF : 1002 Pages
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Page Revisions (See Manual for Details)
22.1 Features
736 Description amended
Programming/erasing time
Number of programming
22.4.3 Programming/Erasing
Interface Parameters
(2) Programming/Erasing
Initialization
Programming/erasing time
The flash memory programming time is tP ms (typ) in
128-byte simultaneous programming and t /128ms per
P
byte. The erasing time is t s (typ) per block.
E
Number of programming
The number of flash memory programming can be up
to NWEC times.
758 Description added
Line 13
The general registers R8 to R15 are stored. The general
registers R0 to R7 can be used without being stored.
22.5.3 User Boot Mode
782 Description added
(1) User Boot Mode Initiation
Line 3
22.7 Flash Memory Emulation 791
in RAM
When the reset start is executed in user boot mode, the
check routine for flash-memory related registers runs.
While the check routine is running, the RAM area about
1.2 kbytes from H'FFFF6800 is used by the routine and 4
bytes from H'FFFFDFFC is used as a stack area. NMI
and all other interrupts cannot be accepted. Neither can
the AUD be used in this period. This period is
approximately 100 µs while operating at an internal
frequency of 40 MHz.
Note: Description added
Note: Setting the RAMS bit to 1 puts all the blocks in flash
memory in the programming/erasing-protected
state regardless of the values of the RAM2 to
RAM0 bits (emulation protection). Clear the RAMS
bit to 0 before actual programming or erasure.
RAM emulation can be performed when the user
boot MAT is selected. However,
programming/erasing user boot MAT can be
performed only in boot mode or program mode.
Rev.2.0, 07/03, page xiii of xxxviii

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