WILLAS
1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V
1.0A SURFACE MOUNT SCHOTTKY BARRSIOERD-R3E2C3T-LIFIPEARSCK-2A0VG-E200V
SOD-123+ PACKAGE
FM120-M+
SL12-TNHRU
SLF1M4-1N200-M+
Pb Free Product
Pin•FnBeaitanchtguprironecefssosrdmesiagnt,ioexncellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profilPe siunrface mounted application in ordSerimto plified outline
SOD-123H
Symbol
optimize board space.
• Low power loss, high efficiency.
• HPiginh c1urrecntactahpaobdiliety, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• HPiginh s2urgeacnapoadbielity.
1
• Guardring for overvoltage protection.
2
1
2
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
Re•eLlepada-fcreke ipnargts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing codeCsOufMfixP"OGN"ENT
PACKAGHEalogenREfreEeL SprIZodEuct foRrEpEaLcking cSoPdAeCsINufGfix "H" BOX
(pcs)
(m/m)
(pcs)
Mechanical data
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
SOD-3•23E-Lpoxy
:
7"
UL94-V0
3,000
rated flame
4.0
retardant
30,000 183*183*123 178
382*262*387 240,000
0.040(18.0.)0
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Marking Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Type number
Marking code
• Mounting Position : Any
Dimensions in inches and (millimeters)
• Weight : AppSroLx1im2a-teNd -0T.0H11 gram
L2
SL14-N-TH
L4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 2N5℃oteam: bNie:ntPteamcpkeraatguree ucnoledsseo,thSerOwiDse-s3pe2c3ifi-eLd.
Single phase half wa-vTe,:60THazp, riensigstivReeofeinl ductive load.
For capacitPiveblo-Fadr,edeerapteaccurkreantgbey 2i0s%available
RoHS pRrAoTdINuGcSt for packing code suffix ”G” SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum ReHcuarrleontgPeeank RfreeveersepVrooltdaguect for pacVkRRinMg co2d0e suf3f0ix “H”40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum Average Forward Rectified Current
IO
Suggested solder pad layout
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
1.0
Amp
30
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
RΘJA
CJ
TJ
TSTG
-C55 to +125
40
120
- 65 to +175
-55 to +150
℃/W
PF
℃
℃
CHARACTERISTICS
A
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
B
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
201-
PACKAGE
SOD-323-L
A
0.059 (1.50)
B
0.039 (1.00)
C
0.051 (1.30)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.