SL12T1G(2013) データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

SL12T1G
(Rev.:2013)

300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections

ON Semiconductor 

SL05T1 Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation @ 8x20 usec (Note 1)

@ TL ≤ 25°C

IEC 61000−4−2

Level 4

Contact Discharge

Air Discharge

IEC 61000−4−4

EFT

IEC 61000−4−5

Lightning

Ppk

300

W

Vpp

±8

kV

±16

kV

40

A

12

A

Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C

Derate above 25°C

°PD°

225

°mW°

1.8

mW/°C

Thermal Resistance Junction to Ambient

Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C

Derate above 25°C

RqJA

°PD°

556

°C/W

300

°mW

2.4

mW/°C

Thermal Resistance Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage Temperature Range

TJ, Tstg

− 55 to +150

°C

Lead Solder Temperature − Maximum (10 Second Duration)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Non−repetitive current pulse per Figure 2

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

IT

QVBR

IF

VF

ZZT

IZK

ZZK

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

Maximum Temperature Coefficient of VBR

Forward Current

Forward Voltage @ IF

Maximum Zener Impedance @ IZT

Reverse Current

Maximum Zener Impedance @ IZK

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

http://onsemi.com

2

Share Link: