SL12T1G(2013) データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
SL12T1G
(Rev.:2013)
(Rev.:2013)
ON Semiconductor
SL12T1G Datasheet PDF : 5 Pages
| |||
SL05T1 Series
ELECTRICAL CHARACTERISTICS
Device VRWM
Device Marking (V)
IR @ VRWM
(mA)
Breakdown Voltage VC, Clamping Voltage
(Note 4)
(Note 5)
Max
VBR @ 1 mA (Volts)
@1A
@5A
IPP
Min
Max
(V)
(V)
(A)
SL05
L05
5.0
20
6.0
8.0
9.8
11
17
SL12
L12
12
1.0
13.3
15.5
19
24
12
SL15
L15
15
1.0
16.7
18.5
24
30
10
SL24
L24
24
1.0
26.7
29
43
4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25°C
5. Surge current waveform per Figure 2
55
5.0
Capacitance
@ VR = 0 V, 1 MHz (pF)
Typ
Max
3.5
5.0
3.5
5.0
3.5
5.0
3.5
5.0
TYPICAL CHARACTERISTICS
10
1
0.1
0.01
0.1
1
10
100
PULSE WIDTH (ms)
1000
Figure 1. Maximum Peak Power Rating
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 2. 8 × 20 ms Pulse Waveform
4
3.5
3
2.5
2
1.5
1
0.5
0
@ ZERO BIAS
@ 50% VRWM
SL05
SL15
SL24
@ VRWM
Figure 3. Typical Junction Capacitance
10
SL05T1
1
0.1
0.01
−55
25
150
TEMPERATURE (°C)
Figure 4. Typical Leakage Over Temperature
http://onsemi.com
3
Share Link: 