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SS6642-37GZ データシートの表示(PDF) - Silicon Standard Corp.

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SS6642-37GZ
SSC
Silicon Standard Corp. 
SS6642-37GZ Datasheet PDF : 22 Pages
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Component Power Dissipation
Operating in discontinuous mode, power loss in
the winding resistance of the inductor can be
approximated to
PD L
=
2  TON  * (RD) *  VOUT + VF  * (POUT)
3L
VOUT
where POUT=VOUT * IOUT; RS=Inductor DC R;
VD = Diode drop.
SS6642G
The power dissipated in the MOSFET switch is
PDSW = 2  TON  * (RON) *  VOUT + VD VIN  * (POUT)
3L
VOUT
The power dissipated in the rectifier diode is
PDd =  VD  * (POUT)
VOUT
1/15/2005 Rev.2.10
www.SiliconStandard.com
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