SS8550T データシートの表示（PDF） - Secos Corporation.
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SS8550T Datasheet PDF : 2 Pages
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Elektronische Bauelemente
SS8550T
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM : 1 W
Collector Current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150O C
1
2
3
1
2
3
1 23
1. EMITTER
2. BASS
3 . COLLECTOR
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μA， IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.1mA， IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA， IC=0
-5
Collector cut-off current
ICBO
VCB=-40 V , IE=0
Collector cut-off current
ICEO
VCE=-20V , IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
HFE(1)
VCE=-1V, IC= -100m A
85
HFE(2)
VCE=-1V, IC= -800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=-800 mA, IB=-80m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
VBE(sat) IC=-800 mA, IB=-80m A
VCE=-10V, IC= -50mA
fT
100
f=30MHz
C
120-200
D
160-300
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.5
V
-1.2
V
MHz
E
300-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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