D40NF10 データシートの表示（PDF） - STMicroelectronics

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D40NF10

N-channel 100V - 0.025Ω- 50A TO-220 / DPAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STP40NF10 - STD40NF10

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50A, VGS = 0

ISD = 50A, VDD = 25V

di/dt = 100A/µs,

Tj = 150°C

(see Figure 18)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max Unit

80 A

320 A

1.5 V

80

ns

250

nC

6.4

A

5/15

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