SUD50N02-04P(2004_01) データシートの表示（PDF） - Vishay Semiconductors
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SUD50N02-04P Datasheet PDF : 3 Pages
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SPICE Device Model SUD50N02-04P
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Forward Voltagea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125°C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
IS = 50 A, VGS = 0 V
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
VDD = 10 V, RL = 0.20 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
1.7
1190
0.0035
0.0048
0.0049
68
0.91
0.0035
0.0048
0.90
4807
1664
641
40
14
13
31
18
34
31
5000
1650
770
40
14
13
20
20
50
15
Unit
V
A
Ω
S
V
Pf
NC
Ns
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Document Number: 72389
08-Jun-04
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