SUD50N06-09L(2002) データシートの表示（PDF） - Vishay Semiconductors

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SUD50N06-09L
(Rev.:2002)

N-Channel 60-V (D-S), 175C MOSFET, Logic Level

Vishay Semiconductors 

SUD50N06-09L

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currentb

Drain-Source On-State Resistanceb

Forward Transconductanceb

Dynamic

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VGS = 0 V, ID = 250 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "20 V

VDS = 48 V, VGS = 0 V

VDS = 48 V, VGS = 0 V, TJ = 125_C

VDS = 48 V, VGS = 0 V, TJ = 175_C

VDS = 5 V, VGS = 10 V

VGS = 10 V, ID = 20 A

VGS = 10 V, ID = 20 A, TJ = 125_C

VGS = 10 V, ID = 20 A, TJ = 175_C

VGS = 4.5 V, ID = 15 A

VDS = 15 V, ID = 20 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Chargec

Gate-Source Chargec

Gate-Drain Chargec

Turn-On Delay Timec

Rise Timec

Turn-Off Delay Timec

Fall Timec

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0 V, VDS = 25 V, f = 1 MHz

VDS = 30 V, VGS = 10 V, ID = 50 A

VDD = 30 V, RL = 0.6 W

ID ^ 50 A, VGEN = 10 V, RG = 2.5 W

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

Pulsed Current

Diode Forward Voltage

Reverse Recovery Time

ISM

VSD

IF = 20 A, VGS = 0 V

trr

IF = 20 A, di/dt = 100 A/ms

Notes:

a. For design aid only; not subject to production testing.

b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

c. Independent of operating temperature.

Min Typa Max Unit

60

V

1.0

2.0

3.0

"100

nA

1

50

mA

250

50

A

0.0074 0.0093

0.016

W

0.020

0.0122

S

2650

470

pF

225

47

70

10

nC

12

10

20

15

25

ns

35

50

20

30

100

A

1.0

1.5

V

45

100

ns

www.vishay.com

2

Document Number: 72004

S-21714—Rev. A, 07-Oct-02

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