SUD50N06-09L(2002) データシートの表示（PDF） - Vishay Semiconductors

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SUD50N06-09L
(Rev.:2002)

N-Channel 60-V (D-S), 175C MOSFET, Logic Level

Vishay Semiconductors 

New Product

SUD50N06-09L

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET, Logic Level

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

0.0093 @ VGS = 10 V

60

0.0122 @ VGS = 4.5 V

ID (A)a

50

50

TO-252

FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

APPLICATIONS

D Automotive

- ABS

- Motor Drives

- Fuel Injection

D

GDS

Top View

Order Number:

SUD50N06-09L

Drain Connected to Tab

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Gate-Source Voltage

Continuous Drain Current (TJ = 175_C)b

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Repetitive Avalanche Energy (Duty Cycle v 1%)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

TC = 25_C

TC = 100_C

L = 0.1 mH

TC = 25_C

TA = 25_C

VGS

ID

IDM

IS

IAR

EAR

PD

TJ, Tstg

"20

50

50a

100

50a

50

125

100

3b, 8.3b, c

-55 to 175

Unit

V

A

mJ

W

_C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case

t p 10 sec.

Steady State

Notes:

a. Package limited.

b. Surface mounted on 1” x 1” FR4 Board, t v 10 sec.

c. t p 10 sec.

Document Number: 72004

S-21714—Rev. A, 07-Oct-02

Symbol

RthJA

RthJC

Typical

15

40

1.2

Limit

18

50

1.5

Unit

_C/W

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