TC1307 データシートの表示（PDF） - Microchip Technology

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TC1307

Four-Channel CMOS LDO with Select Mode, Shutdown and Independent Reset

Microchip Technology 

TC1307

Unless otherwise specified, all limits are established for VIN = VR+1, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = 25°C.

Boldface type specifications apply for junction temperatures, TJ (Note 9) of -40°C to +125°C.

Parameter

Sym

Min

Typ

Max

Units

Conditions

VOUT Temperature Coefficient

LDO1/LDO2/LDO3/LDO4

TCVOUT

—

20

40

Line Regulation LDO1/LDO2/

LDO3/LDO4

∆VOUT/(VOUTx∆VIN) —

0.05

Load Regulation

LDO1/LDO2/LDO3/LDO4

∆VOUT/VOUT

—

—

Thermal Regulation

LDO1/LDO2/LDO3/LDO4

∆VOUT/∆PD

—

0.04

Dropout Voltage

LDO1/LDO2/LDO3/LDO4

VIN-VOUT

—

2

—

15

—

35

—

100

Output Noise

LDO1/LDO2/LDO3/LDO4

eN

—

1.2

Over Temperature Protection Characteristics:

—

ppm/°C Note 3

0.2

%/V (VR+1) ≤ VIN ≤ 6.0V

2.0

%

IL = 0.1 mA to IOUT_MAX

Note 4

—

V/W Note 5

—

mV IL = 100 µA, Note 6

—

IL = 20 mA, Note 6

90

IL = 50 mA, Note 6

280

IL = 150 mA, Note 6

—

µV/(Hz)½ IOUT = 100 mA, f = 10 kHz

COUT = 1 µF to noise

Thermal Shutdown Protection

Thermal Shutdown Hysteresis

TSD

∆TSD

—

150

—

—

10

—

°C Note 7

°C

SHDN Input Characteristics:

SHDN Input High Threshold

SHDN Input Low Threshold

Wake-up Time

(from SHDN mode)

VIH

60

—

—

% of VIN VIN = 2.7V to 6.0V

VIL

—

—

15

% of VIN VIN = 2.7V to 6.0V

tWK

—

10

—

µsec VIN = 5V, IL = 100 mA,

COUT = 1 µF, CIN = 1 µF,

see Figure 4-1

Settling Time

(from SHDN mode)

tS

—

40

—

µsec VIN = 5V, IL = 100 mA,

COUT = 1 µF, CIN = 1 µF,

See Figure 4-1

Shutdown Leakage Current

SELECT Input Characteristics:

ISHDN

—

±0.01

—

nA VSHDN = VIN or GND

SELECT Input High Threshold

SELECT Input Low Threshold

SELECT Input Leakage

Current

RESET Output Characteristics:

VSELH

VSELL

ISELECT

VIN-0.2 —

—

—

—

0.2

—

±0.11

—

—

±0.06

—

V VIN = 2.7V to 6.0V

V VIN = 2.7V to 6.0V

µA VSELECT = VIN

VSELECT = GND

Detect Operating

Voltage Range

VDET

1.0

—

6.0

1.2

—

6.0

V TA = 0°C to +70°C

TA = -40°C to +125°C

Note 1:

2:

3:

4:

The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + VDROPOUT.

VR is the nominal regulator output voltage. For example: VR = 1.8V, 2.5V, 2.8V or 3.0V.

TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * ∆Temperature), VOUT-HIGH = Highest voltage measured over the tempera-

ture range. VOUT-LOW = Lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is

tested over a load range from 1mA to the maximum specified output current. Changes in output voltage due to heating

effects are determined using thermal regulation specification TCVOUT.

5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied.

Specifications are for a current pulse equal to ILMAX at VIN = 6.0V for t = 10 msec.

6: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value

with a 1V differential applied.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-

ature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipa-

tion will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction

temperatures above 150°C can impact the device reliability.

8: VTH-MIN = 2.55V and VTH-MAX = 2.70V.

9: The Junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambi-

ent temperature is not significant.

 2002 Microchip Technology Inc.

DS21702A-page 3

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