Philips Semiconductors
DVB selective AGC amplifier
Product specification
TDA9888TS; TDA9889TS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
Isource(1)
Isource(2)
source current (tuner AGC
charge current)
normal mode
fast mode activated by
internal level detector
0.21 0.27
8
10
Vsat(ul)
Vsat(ll)
αTH
upper limit saturation voltage
lower limit saturation voltage
level loss threshold of internal
detector for activating fast
AGC
pin operating as current
output
0 dB corresponds to RTOP
alignment
VP − 0.3 −
−
−
6
8
tdet(off)
fast AGC detection off time
all signal events below αTH 40
60
External tuner AGC; electronic switch operation; pin TAGC connected to pin TAGCEXT
0.33
12
−
0.3
10
80
Ron
resistance between pins TAGC
and TAGCEXT in operation
−
900
1 200
Vop(I/O)
I/O operating voltage range
0
−
VP
Tuner AGC takeover point adjust and TAGC operating mode settings; pin TADJ; see Table 3
VRTOP
VTADJ
RTOP
alignment voltage
voltage at pin TADJ
resistor connected between
pin TADJ and GND
RTOP at pin
0
TADJ = 0 to 22 kΩ
pin open-circuit
−
for LOW: RTOP at pin TADJ −
for HIGH: pin open-circuit 1
−
2
3.5
−
−
25
−
−
Low-pass control PLL; pin LFLP
VLFLP
KO
KD
Rlf(int)
Isink/source
loop filter operating range
VCO steepness: ∆fVCO/∆VLFS
phase frequency detector
steepness: ∆ILFLP/∆ϕFM
internal loop filter resistor
phase frequency detector I/O
current
note 5
1
−
3
−
4
−
−
9
−
3.75 4.7
5.65
−
−
65
Synthesizer PLL; pin LFS
VLFS
KO
KD
Isink/source
φN(synth)
αspur
Ileak(lf)
loop filter operating range
VCO steepness: ∆fVCO/∆VLFS
phase frequency detector
steepness: ∆ILFS/∆ϕFM
phase frequency detector I/O
current
synthesizer phase noise
performance
synthesizer spurious
performance
loop filter leakage current
note 5
at 1 kHz
at 10 kHz
at 100 kHz
at 1.4 MHz
multiple of ∆f = 500 kHz
synthesizer spurious
performance > 50 dBc
1
−
3
−
25
−
−
16
−
−
−
100
89
99
−
89
97
−
98
102
−
115
119
−
50
−
−
−
−
10
UNIT
µA
µA
V
V
dB
ms
Ω
V
V
V
kΩ
MΩ
V
MHz/V
µA/rad
kΩ
µA
V
MHz/V
µA/rad
µA
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc
nA
2004 Nov 02
10