TIM1011-4L データシートの表示（PDF） - Toshiba

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TIM1011-4L

MICROWAVE POWER GaAs FET

Toshiba 

TIM1011-4L

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )

CHARACTERISTICS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation (Tc= 25 °C)

Channel Temperature

Storage Temperature

SYMBOL

VDS

VGS

IDS

PT

Tch

Tstg

UNIT

V

V

A

W

°C

°C

PACKAGE OUTLINE (2-9D1B)

RATING

15

-5

5.2

42.8

175

-65 to +175

Unit: mm

(1) Gate

(2) Source

(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

2

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