PHC21025 データシートの表示（PDF） - Philips Electronics
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PHC21025 Datasheet PDF : 16 Pages
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Philips Semiconductors
Complementary enhancement
mode MOS transistors
1.2
handbook, halfpage
k
1.1
MBE138
1.0
0.9
0.8
0.7
0.6
50
0
50
100
Tj
( oC) 150
k = -V----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
Typical VGSth at ID = 1 mA; VDS =VGS = VGSth.
Fig.17 Temperature coefficient of gate-source
threshold voltage; N and P-channels.
Product specification
PHC21025
1.8
handbook, halfpage
k
1.6
1.4
1.2
MBE139
(1)
(2)
1.0
0.8
0.6
50
0
50
k = R-----D-R---S-D--o--S-n--o--a-n---t--a-2--t-5---T---°-j--C---
Typical RDSon at:
(1) ID = 2.2 A; VGS = 10 V.
(2) ID = 1 A; VGS = 4.5 V.
100
Tj
( oC) 150
Fig.18 Temperature coefficient of drain-source
on-resistance; N-channel.
1.8
handbook, halfpage
k
1.6
1.4
MBE146
(1)
(2)
1.2
1.0
0.8
0.6
50
0
50
k = R-----D-R---S-D--o--S-n--o--a-n---t--a-2--t-5---T---°-j--C---
Typical RDSon at:
(1) ID = −1 A; VGS = −10 V.
(2) ID = −0.5 A; VGS = −4.5 V.
100
Tj
( oC) 150
Fig.19 Temperature coefficient of drain-source
on-resistance; P-channel.
1997 Jun 20
10
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