Philips Semiconductors
Complementary enhancement
mode MOS transistors
Product specification
PHC21025
SYMBOL
PARAMETER
Crss
reverse transfer capacitance
N-channel
P-channel
QG
total gate charge
N-channel
P-channel
QGS
gate-source charge
N-channel
P-channel
QGD
gate-drain charge
N-channel
P-channel
Switching times
ton
turn-on time
N-channel
P-channel
toff
turn-off time
N-channel
P-channel
Source-drain diode
VSD
source-drain diode forward
voltage
N-channel
P-channel
trr
reverse recovery time
N-channel
P-channel
CONDITIONS
MIN. TYP. MAX. UNIT
VGS = 0; VDS = 20 V; f = 1 MHz
−
VGS = 0; VDS = −20 V; f = 1 MHz
−
VGS = 10 V; VDS = 15 V; ID = 2.3 A
−
VGS = −10 V; VDS = −15 V; ID = −2.3 A −
VGS = 10 V; VDS = 15 V; ID = 2.3 A
−
VGS = −10 V; VDS = −15 V; ID = −2.3 A −
VGS = 10 V; VDS = 15 V; ID = 2.3 A
−
VGS = −10 V; VDS = −15 V; ID = −2.3 A −
50 −
pF
50 −
pF
10 30 nC
10 25 nC
1
−
nC
1
−
nC
2.5 −
nC
3
−
nC
VGS = 0 to 10 V; VDD = 20 V;
ID = 1 A; RL = 20 Ω
VGS = 0 to −10 V; VDD = −20 V;
ID = −1 A; RL = 20 Ω
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; RL = 20 Ω
VGS = −10 to 0 V; VDD = −20 V;
ID = −1 A; RL = 20 Ω
−
15 40 ns
−
20 80 ns
−
25 140 ns
−
50 140 ns
VGD = 0; IS = 1.25 A
VGD = 0; IS = −1.25 A
IS = 1.25 A; di/dt = 100 A/µs
IS = −1.25 A; di/dt = 100 A/µs
−
−
1.2 V
−
−
−1.6 V
−
35 100 ns
−
150 200 ns
1997 Jun 20
6