TSH343
2
Electrical Characteristics
Electrical Characteristics
Table 3.
Symbol
VCC = +5V Single Supply, Tamb = 25°C (unless otherwise specified)
Parameter
Test Condition
Min. Typ.
Max.
DC Performance
VDC Input DC shift
Iib Input Bias Current
Rin Input Resistance
RL = 150Ω, Tamb
-40°C < Tamb < +85°C
Tamb , input to GND
-40°C < Tamb < +85°C
Tamb
0.4 0.6 0.8
0.53
18.2 35
20.7
4
Cin Input Capacitance
Tamb
1
ICC Supply Current per Buffer
Power Supply Rejection Ratio
PSRR 20 log (∆Vout/∆VCC)
(see Figure 25 and Figure 26)
no Load, input to GND
-40°C < Tamb < +85°C
input to GND, F = 1MHz
CLF=470nF
CHF=100uF
14.4 18
14.9
70
G DC Voltage Gain
DG
Variation of the DC Voltage Gain
between inputs of 0.3V and 1V
RL = 150Ω, Vin = 1V
1.92 1.99 2.05
Input step from 0.3V to 1V
0.26 0.8
MG1 Gain Matching between 3 channels
MG0.3 Gain Matching between 3 channels
Input = 1V
Input = 0.3V
0.5
2
0.5
2
Dynamic Performance and Output Characteristics
-3dB Bandwidth
Bw
Gain Flatness @ 0.1dB
FPBW Full Power Bandwidth
D
Delay between each channel
(see Figure 30)
Small Signal Vout = 20mVp
RL = 150Ω
160
280
Small Signal Vout = 20mVp
RL = 150Ω
65
Vout = 2Vp-p, VICM = 0.5V,
RL = 150Ω
130
200
0 to 30MHz
0.5
SR Slew Rate (1)
Input step from 0V to 1V,
RL = 150Ω
500 780
VOH High Level Output Voltage
Vin DC = +1.5V, RL = 150Ω 3.7
3.9
VOL Low Level Output Voltage
RL = 150Ω
40
Output Current
IOUT
Vout = 2V, Tamb
-40°C < Tamb < +85°C
45
90
82
Output Short Circuit Current (Isource)
100
Unit
mV
µA
GΩ
pF
mA
dB
V/V
%
%
%
MHz
MHz
ns
V/µs
V
mV
mA
mA
Rev. 2
3/14