MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBTA13
MMBTA14
hFE
5000
—
10,000
—
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT = |hfe| • ftest.
MMBTA13
MMBTA14
10,000
—
20,000
—
VCE(sat)
—
1.5
VBE
—
2.0
fT
125
—
Unit
—
Vdc
Vdc
MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data