XP01119(2009) データシートの表示（PDF） - Panasonic Corporation
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XP01119 Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP01119
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Package
• Two elements incorporated into one package
• Code
(Emitter-coupled transistors with built-in resistor)
SMini5-G1
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2119 × 2
• Pin Name
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
/ ■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e. d ty Collector-base voltage (Emitter open) VCBO
−50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
−50
V
a e cle con Collector current
IC
−100
mA
lifecy , dis Total power dissipation
PT
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin ur Pro tinued Storage temperature
Tstg −55 to +150 °C
■ Marking Symbol: 7P
■ Internal Connection
5
4
Tr1
Tr2
123
ain onincludestyfpoell,opwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
M is ntin tena Collector-base voltage (Emitter open)
/Disco main Collector-emitter voltage (Base open)
ce pe, Collector-base cutoff current (Emitter open)
D tenan ce ty Collector-emitter cutoff current (Base open)
ain nan Emitter-base cutoff current (Collector open)
M ainte Forward current transfer ratio
d m hFE Ratio *
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE(Small
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
VCE = −10 V, IC = −5 mA
(plane Collector-emitter saturation voltage
/Large)
VCE(sat) IC = −10 mA, IB = − 0.3 mA
Min Typ Max Unit
−50
V
−50
V
− 0.1 µA
− 0.5 µA
−1.5 mA
30
0.50 0.99
− 0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.2 V
Input resistance
R1
−30% 1 +30% kΩ
Resistance ratio
R1 / R2
0.08 0.10 0.12
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: May 2009
SJJ00131CED
1
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