ZXM64N02X(2004) データシートの表示（PDF） - Zetex => Diodes

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ZXM64N02X
(Rev.:2004)

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM64N02X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance

(1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS 20

IDSS

IGSS

VGS(th) 0.7

RDS(on)

gfs

6.1

V

ID=250µA, VGS=0V

1

µA VDS=20V, VGS=0V

100

nA VGS=± 12V, VDS=0V

V

ID=250µA, VDS= VGS

0.040 Ω

0.050 Ω

VGS=4.5V, ID=3.8A

VGS=2.7V, ID=1.9A

S

VDS=10V,ID=1.9A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

1100

350

100

pF

VDS=15 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

5.7

9.6

28.3

11.6

16

3.5

5.4

ns

ns VDD =10V, ID=3.8A

ns

RG=6.2Ω, RD=2.6Ω

(Refer to test

ns circuit)

nC

V D S= 16 V , V GS= 4 . 5V ,

nC ID=3.8A

(Refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

23.7

Reverse Recovery Charge(3)

Qrr

13.3

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

Tj=25°C, IS=3.8A,

V G S= 0V

ns Tj=25°C, IF=3.8A,

di/dt= 100A/µs

nC

ISSUE 1 - JUNE 2004

4

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