1N6642U データシートの表示（PDF） - STMicroelectronics
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1N6642U Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
1N6642U
Symbol
Table 2. Absolute ratings (limiting values)
Parameter
Value
VRRM Repetitive peak reverse voltage
100
IF(RMS) Forward rms current
0.5
IF(AV) Average forward rectified current (1)
300
IFSM Forward surge current
tp = 8.3 ms sinusoidal,
2
tamb 25 °C
Tstg
Storage temperature range
-65 to +175
Tj
Operating junction temperature range
Tsol
Maximum soldering temperature (2)
-65 to +175
245
1. For all variants at Tc+155 °C per diode, derate linearly to 0 A at +175 °C.
2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.
Symbol
Rth (j-c)
Rth (j-a)
Junction to case (1)
Junction to ambient
1. Package mounted on infinite heatsink
Table 3. Thermal resistance
Parameter
Value
60
280
Unit
V
A
mA
A
°C
°C
°C
Unit
C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
VBR (1) Breakdown voltage
IR (1) Reverse current
VF (2) Forward voltage
1. Pulse test: tp = 10 ms, δ < 2%
2. Pulse test: tp = 680 µs, δ < 2%
Tj = 25 °C IR = 100 µA
100
Tj = 25 °C VR = 20 V
-
Tj = 25 °C VR = 75 V
-
Tj = 150 °C VR = 20 V
-
Tj = 150 °C VR = 75 V
-
Tj = 25 C IF = 10 mA
-
Tj = 25 C IF = 100 mA
-
Tj = 150 C IF = 10 mA
-
Tj = -55 C IF = 100 mA
-
-
-
V
-
25
nA
-
50
nA
-
30
µA
-
40
µA
-
800
-
1200
mV
-
800
-
1200
To evaluate the conduction losses use the following equation:
P = 0.74 x IF(AV) + 1.00 x IF2(RMS )
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DocID16972 Rev 4
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