1PS59SB10 データシートの表示（PDF） - NXP Semiconductors.
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1PS59SB10 Datasheet PDF : 6 Pages
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Philips Semiconductors
Schottky barrier (double) diodes
GRAPHICAL DATA
handboo1k,0h3alfpage
IF
(mA)
10 2
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10 1
0
0.4
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
0.8
1.2
VF (V)
Fig.6 Forward current as a function of forward
voltage; typical values.
Product specification
1PS59SB10 series
10 3
IR
(µA)
10 2
10
MSA893
(1)
(2)
1
(3)
10 1
0
10
20 VR (V) 30
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
15
Cd
(pF)
10
MSA891
handbIFook, halfpage
dI F
dt
5
0
0
10
20 V R (V) 30
Qr
IR
tf
10% t
90%
MRC129 - 1
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 20
4
Fig.9 Reverse recovery definitions.
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