2N7002K データシートの表示（PDF） - NXP Semiconductors.
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2N7002K Datasheet PDF : 12 Pages
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Philips Semiconductors
2N7002K
TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
V(BR)GSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
IG = ±1 mA; VDS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 200 mA; Figure 7 and 8
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
ton
turn-on time
toff
turn-off time
Source-drain diode
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Figure 11
VDD = 50 V; RL = 250 Ω;
VGS = 10 V; RG = 50 Ω; RGS = 50 Ω
VSD
source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 300 mA; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 25 V
Min Typ Max Unit
60 75
55 -
16 22
1
2
0.6 -
-
-
-
V
-
V
-
V
V
-
V
-
V
3.5 V
-
0.01 1
µA
-
-
10 µA
-
50 500 nA
-
2.8 3.9 Ω
-
5.2 7.2 Ω
-
3.8 5.3 Ω
-
13 40 pF
-
8
30 pF
-
4
10 pF
-
3
10 ns
-
9
15 ns
-
0.93 1.5 V
-
30 -
ns
-
30 -
nC
9397 750 11703
Product data
Rev. 01 — 20 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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