2SD2656 データシートの表示（PDF） - ROHM Semiconductor
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2SD2656 Datasheet PDF : 7 Pages
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2SD2656
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
30
V
VCEO
30
V
VEBO
6
V
IC
1
A
ICP*1
2
A
PD*2
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 10μA
30 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
30 -
-
V
Emitter-base breakdown voltage BVEBO IE = 10μA
6
-
-
V
Collector cut-off current
ICBO VCB = 30V
-
- 100 nA
Emitter cut-off current
IEBO VEB = 6V
-
- 100 nA
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 25mA
-
140 350 mV
DC current gain
hFE*3 VCE = 2V, IC = 100mA 270
-
680
-
Transition frequency
f T*3
VCE = 2V, IE = -100mA,
f = 100MHz
-
400
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
*1 Pw=1ms, Single Pulse.
*2 Each terminal mounted on a reference land.
*3 Measured using pulse current.
-
5
- pF
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20150730 - Rev.002
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