BAP65-02(2008) データシートの表示（PDF） - NXP Semiconductors.
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BAP65-02 Datasheet PDF : 7 Pages
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NXP Semiconductors
Silicon PIN diode
Product specification
BAP65-02
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse leakage current
Cd
diode capacitance
rD
diode forward resistance
|s21|2
isolation
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
τL
charge carrier life time
LS
series inductance
CONDITIONS
TYP.
IF = 50 mA
VR = 20 V
VR = 0 V; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 3 V; f = 1 MHz
VR = 20 V; f = 1 MHz
IF = 1 mA; f = 100 MHz
IF = 5 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
IF = 100 mA; f = 100 MHz
VR = 0; f = 900 MHz
VR = 0; f = 1800 MHz
VR = 0; f = 2450 MHz
IF = 1 mA; f = 900 MHz
IF = 1 mA; f = 1800 MHz
IF = 1 mA; f = 2450 MHz
IF = 5 mA; f = 900 MHz
IF = 5 mA; f = 1800 MHz
IF = 5 mA; f = 2450 MHz
IF = 10 mA; f = 900 MHz
IF = 10 mA; f = 1800 MHz
IF = 10 mA; f = 2450 MHz
IF = 100 mA; f = 900 MHz
IF = 100 mA; f = 1800 MHz
IF = 100 mA; f = 2450 MHz
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
0.9
−
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
0.17
0.6
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX.
1.1
20
−
0.9
0.8
−
−
0.95
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
V
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
−
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 04 - 8 January 2008
3 of 7
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