BAS56 データシートの表示（PDF） - NXP Semiconductors.

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BAS56

High-speed double diode

NXP Semiconductors. 

BAS56

High-speed double diode

Rev. 3 — 29 June 2010

Product data sheet

1. Product profile

1.1 General description

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a

small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not

connected.

1.2 Features and benefits

„ High switching speed: trr ≤ 6 ns

„ Reverse voltage: VR ≤ 60 V

„ Repetitive peak reverse voltage: VRRM ≤ 60 V

„ Repetitive peak forward current: IFRM ≤ 600 mA

„ AEC-Q101 qualified

„ Small SMD plastic package

1.3 Applications

„ High-speed switching in e.g. surface-mounted circuits

1.4 Quick reference data

Table 1.

Symbol

IF

IR

VR

trr

Quick reference data

Parameter

forward current

reverse current

reverse voltage

reverse recovery time

Conditions

VR = 60 V

Min Typ Max

[1][2] -

-

200

-

-

100

-

-

60

[3] -

-

6

[1] Single diode loaded.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB).

[3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.

Unit

mA

nA

V

ns

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