BTA212X-600F データシートの表示（PDF） - NXP Semiconductors.
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BTA212X-600F Datasheet PDF : 9 Pages
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NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
CONDITIONS
BTA212X-
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate
open circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1 V/µs; gate
open circuit
...D
30
1.0
3.5
MIN.
...E
60
8.0
16
MAX. UNIT
...F
70
-
V/µs
21
- A/ms
32
- A/ms
June 2003
3
Rev 3.000
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